cystech electronics corp. spec. no. : c657i3 issued date : 2007.04.04 revised date :2009.02.04 page no. : 1/5 BTA1640I3 cystek product specification pnp epitaxial planar power transistor bv ceo -50v i c -7a r cesat BTA1640I3 70m features ? low collector-emitter saturation voltage, v ce(sat) = -0.4v(max) @ i c = -3a, i b =-0.15a ? excellent current gain linearity ? rohs compliant package symbol outline absolute maximum ratings (ta=25 c) BTA1640I3 to-251 b c b base c collector e emitter b c e parameter symbol limits unit collector-base voltage v cbo -60 v collector-emitter voltage v ceo -50 v emitter-base voltage v ebo -5 v collector current (dc) i c -7 i cp -10 (note 1) a collector current (pulse) power dissipation @ t a =25 p d 1 p d 20 w power dissipation @ t c =25 thermal resistance, junction to ambient r ja 125 c/w thermal resistance, junction to case r jc 6.25 c/w junction temperature tj 150 c storage temperature tstg -55~+150 c note : 1. single pulse , pw Q 380 s, duty Q 2%.
cystech electronics corp. spec. no. : c657i3 issued date : 2007.04.04 revised date :2009.02.04 page no. : 2/5 BTA1640I3 cystek product specification characteristics (ta=25 c) symbol min. typ. max. unit test conditions *bv ceo -50 - - v i c =-10ma, i b =0 bv cbo -60 - - v i c =-1ma, i e =0 bv ebo -5 - - v i e =-1ma, i c =0 i ceo - - -50 a v ce =-30v, i b =0 i cbo - - -1 a v cb =-50v, i b =0 i ebo - - -1 a v eb =-5v, i c =0 *v ce(sat) - -0.2 -0.4 v i c =-3a, i b =-150ma *v be(sat) - - -1.2 v i c =-3a, i b =-150ma *h fe 120 - 400 - v ce =-1v, i c =-1a *h fe 30 - - - v ce =-1v, i c =-3a *pulse test : pulse width 380 s, duty cycle 2% classification of h fe 1 rank y g range 120~240 200~400 ordering information device package shipping marking to-251 BTA1640I3 80 pcs / tube, 50 tubes / box a1640 (rohs compliant) characteristic curves current gain vs collector current 10 100 1000 1 10 100 1000 10000 collector current---ic(ma) current gain---hfe vce=1v vce=2v saturation voltage vs collector current 10 100 1000 10000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) vce(sat) ic=30ib ic=50ib
cystech electronics corp. spec. no. : c657i3 issued date : 2007.04.04 revised date :2009.02.04 page no. : 3/5 BTA1640I3 cystek product specification characteristic curves(cont.) saturation voltage vs collector current 100 1000 10000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) vbe(sat)@ic=50ib grounded emitter output characteristics 0 500 1000 1500 2000 2500 3000 3500 4000 0123456 collector-to-emitter voltage---vce(v) collector current---ic(ma) ib=0 2ma 6ma 10ma 20ma grounded emitter output characteristics 0 1000 2000 3000 4000 5000 6000 7000 8000 0123456 collector-to-emitter voltage---vce(v) collector current---ic(ma) ib=0ma 5ma 10ma 25ma 50ma power derating curve 0 0.2 0.4 0.6 0.8 1 1.2 0 50 100 150 200 ambient temperature---ta() power dissipation---pd(w) power derating curve 0 5 10 15 20 25 0 50 100 150 200 case temperature---tc() power dissipation---pd(w)
cystech electronics corp. spec. no. : c657i3 issued date : 2007.04.04 revised date :2009.02.04 page no. : 4/5 BTA1640I3 cystek product specification recommended wave soldering condition soldering time product peak temperature pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds ? time(ts min to ts max ) time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max.
cystech electronics corp. spec. no. : c657i3 issued date : 2007.04.04 revised date :2009.02.04 page no. : 5/5 BTA1640I3 cystek product specification to-251 dimension *: typical inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.0177 0.0217 0.45 0.55 g 0.2559 - 6.50 - b 0.0354 0.0591 0.90 1.50 h - *0.1811 - *4.60 c 0.0177 0.0236 0.45 0.60 i - 0.0449 - 1.14 d 0.0866 0.0945 2.20 2.40 j - 0.0346 - 0.88 e 0.2441 0.2677 6.20 6.80 k 0.2047 0.2165 5.20 5.50 f 0.2677 0.2835 6.80 7.20 a e f g h j i 3 2 1 k c d b marking: a1640 style: pin 1.base 2.collector 3.emitter 3-lead to-251 plastic package cystek packa g e code: i3 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: kfc; pure tin plated ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0 important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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